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HYB3117805BSJL-70 - 2M X 8 EDO DRAM, 70 ns, PDSO28

HYB3117805BSJL-70_3770740.PDF Datasheet


 Full text search : 2M X 8 EDO DRAM, 70 ns, PDSO28


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Elpida Memory, Inc.
ELPIDA MEMORY INC
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OKI ELECTRIC INDUSTRY CO LTD
HYB3117805BSJL-70 2M X 8 EDO DRAM, 70 ns, PDSO28
SIEMENS AG
HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 2M X 64 EDO DRAM MODULE, 60 ns, ZMA144
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INFINEON TECHNOLOGIES AG
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Alliance Semiconductor, Corp.
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY 4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY 1M x 72 Bit ECC DRAM Module unbuffered
1M x 64 Bit DRAM Module unbuffered
From old datasheet system
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
IS41LV8200 IS41LV8200-50J IS41LV8200-50JI IS41LV82 5V 2M x 8(16-MBIT) dynamic RAM with edo page mode
2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 2M X 8 EDO DRAM, 60 ns, PDSO28
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E 3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
Alliance Semiconductor
 
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HYB3117805BSJL-70 参数 封装 HYB3117805BSJL-70 器件参数 HYB3117805BSJL-70 dropout HYB3117805BSJL-70 ic equivalent HYB3117805BSJL-70 filetype:pdf
 

 

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